GeneSiC Semiconductor / MBR2X050A080
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MBR2X050A080
| Nimewo Pati Manifakti: | MBR2X050A080 |
| Manifakti: | GeneSiC Semiconductor |
| Pati nan Deskripsyon: | DIODE SCHOTTKY 80V 50A SOT227 |
| Fichye done yo: | MBR2X050A080 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- GeneSiC Semiconductor MBR2X050A080 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | - |
| Pakè | Bulk |
| Pati Status | Active |
| Dyòd konte genyen | 2 Independent |
| Kalite dyòd | Schottky |
| Voltage - DC ranvèse (Vr) (Max) | 80 V |
| Kouran - Mwayèn rektifye (Io) (pou chak dyòd) | 50A |
| Voltage - Forward (Vf) (Max) @ Si | 840 mV @ 50 A |
| Vitès | Fast Recovery =< 500ns, > 200mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | - |
| Kouran - Ranvèse Leakage @ Vr | 1 mA @ 80 V |
| Tanperati opere - Junction | -40°C ~ 150°C |
| Mounting Kalite | Chassis Mount |
| Pake / Ka | SOT-227-4, miniBLOC |
| Founisè Aparèy pake | SOT-227 |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
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