Vishay General Semiconductor – Diodes Division / MBR20100CT-M3/4W
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MBR20100CT-M3/4W
| Nimewo Pati Manifakti: | MBR20100CT-M3/4W |
| Manifakti: | Vishay General Semiconductor – Diodes Division |
| Pati nan Deskripsyon: | DIODE ARRAY SCHOTTKY 100V TO220 |
| Fichye done yo: | MBR20100CT-M3/4W Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- Vishay General Semiconductor – Diodes Division MBR20100CT-M3/4W disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | TMBS® |
| Pakè | Tube |
| Pati Status | Active |
| Dyòd konte genyen | 1 Pair Common Cathode |
| Kalite dyòd | Schottky |
| Voltage - DC ranvèse (Vr) (Max) | 100 V |
| Kouran - Mwayèn rektifye (Io) (pou chak dyòd) | 10A |
| Voltage - Forward (Vf) (Max) @ Si | 800 mV @ 10 A |
| Vitès | Fast Recovery =< 500ns, > 200mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | - |
| Kouran - Ranvèse Leakage @ Vr | 100 µA @ 100 V |
| Tanperati opere - Junction | -65°C ~ 150°C |
| Mounting Kalite | Through Hole |
| Pake / Ka | TO-220-3 |
| Founisè Aparèy pake | TO-220AB |
Estati Stock: 3865
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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