Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la
| Nimewo Pati Manifakti: | HTNFET-DC |
| Manifakti: | Honeywell Aerospace |
| Pati nan Deskripsyon: | MOSFET N-CH 55V 8-DIP |
| Fichye done yo: | HTNFET-DC Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |

| Kalite | Deskripsyon |
|---|---|
| Seri | HTMOS™ |
| Pakè | Bulk |
| Pati Status | Active |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 55 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | - |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 5V |
| Rds Sou (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
| Vgs (th) (Max) @ Id | 2.4V @ 100µA |
| Gate Chaje (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Vgs (Max) | 10V |
| Antre Kapasite (Ciss) (Max) @ Vds | 290 pF @ 28 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 50W (Tj) |
| Tanperati opere | - |
| Mounting Kalite | Through Hole |
| Founisè Aparèy pake | - |
| Pake / Ka | 8-CDIP Exposed Pad |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
