IR (Infineon Technologies) / 1EDN7511BXUSA1
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1EDN7511BXUSA1
| Nimewo Pati Manifakti: | 1EDN7511BXUSA1 |
| Manifakti: | IR (Infineon Technologies) |
| Pati nan Deskripsyon: | IC GATE DRV HALF BRD/LOW SOT23-6 |
| Fichye done yo: | 1EDN7511BXUSA1 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- IR (Infineon Technologies) 1EDN7511BXUSA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | EiceDriver™ |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Active |
| Kondwi konte genyen | Half-Bridge, Low-Side |
| Kalite Chèn | Single |
| Kantite Chofè | 1 |
| Kalite pòtay | N-Channel, P-Channel MOSFET |
| Voltage - Pwovizyon pou | 4.5V ~ 20V |
| Lojik Voltage - VIL, VIH | 1.2V, 1.9V |
| Kouran - Peak Sòti (Sous, koule) | 4A, 8A |
| Kalite Antre | Inverting, Non-Inverting |
| Segondè Voltage Side - Max (Bootstrap) | - |
| Leve / tonbe tan (tip) | 6.5ns, 4.5ns |
| Tanperati opere | -40°C ~ 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Pake / Ka | SOT-23-6 |
| Founisè Aparèy pake | PG-SOT23-6-2 |
Estati Stock: 2551
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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