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Nimewo Pati Manifakti: | EFC6612R-TF |
Manifakti: | Rochester Electronics |
Pati nan Deskripsyon: | N-CHANNEL, MOSFET |
Fichye done yo: | EFC6612R-TF Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | - |
Pakè | Bulk |
Pati Status | Active |
FET Kalite | 2 N-Channel (Dual) Common Drain |
FET Karakteristik | Logic Level Gate, 2.5V Drive |
Drenaj Sous Voltage (Vdss) | - |
Kouran - Drenaj kontinyèl (Id) @ 25 ° C | - |
Rds Sou (Max) @ Id, Vgs | - |
Vgs (th) (Max) @ Id | - |
Gate Chaje (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Antre Kapasite (Ciss) (Max) @ Vds | - |
Pouvwa - Max | 2.5W |
Tanperati opere | 150°C (TJ) |
Mounting Kalite | Surface Mount |
Pake / Ka | 6-SMD, No Lead |
Founisè Aparèy pake | 6-CSP (1.77x3.54) |
Estati Stock: 2019995
Minimòm: 1
Kantite | Pri inite | Ext. Pri |
---|---|---|
![]() Pri pa disponib, tanpri RFQ |
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.