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Nimewo Pati Manifakti: | IRF5810TR |
Manifakti: | IR (Infineon Technologies) |
Pati nan Deskripsyon: | MOSFET 2P-CH 20V 2.9A 6-TSOP |
Fichye done yo: | IRF5810TR Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | HEXFET® |
Pakè | Tape & Reel (TR) |
Pati Status | Obsolete |
FET Kalite | 2 P-Channel (Dual) |
FET Karakteristik | Logic Level Gate |
Drenaj Sous Voltage (Vdss) | 20V |
Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 2.9A |
Rds Sou (Max) @ Id, Vgs | 90mOhm @ 2.9A, 4.5V |
Vgs (th) (Max) @ Id | 1.2V @ 250µA |
Gate Chaje (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
Antre Kapasite (Ciss) (Max) @ Vds | 650pF @ 16V |
Pouvwa - Max | 960mW |
Tanperati opere | -55°C ~ 150°C (TJ) |
Mounting Kalite | Surface Mount |
Pake / Ka | SOT-23-6 Thin, TSOT-23-6 |
Founisè Aparèy pake | 6-TSOP |
Estati Stock: Anbake menm jou
Minimòm: 1
Kantite | Pri inite | Ext. Pri |
---|---|---|
Pri pa disponib, tanpri RFQ |
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.