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Nimewo Pati Manifakti: | MSCSM120AM16CT1AG |
Manifakti: | Roving Networks / Microchip Technology |
Pati nan Deskripsyon: | PM-MOSFET-SIC-SBD~-SP1F |
Fichye done yo: | MSCSM120AM16CT1AG Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | - |
Pakè | Tube |
Pati Status | Active |
FET Kalite | 2 N Channel (Phase Leg) |
FET Karakteristik | Silicon Carbide (SiC) |
Drenaj Sous Voltage (Vdss) | 1200V (1.2kV) |
Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 173A (Tc) |
Rds Sou (Max) @ Id, Vgs | 16mOhm @ 80A, 20V |
Vgs (th) (Max) @ Id | 2.8V @ 2mA |
Gate Chaje (Qg) (Max) @ Vgs | 464nC @ 20V |
Antre Kapasite (Ciss) (Max) @ Vds | 6040pF @ 1000V |
Pouvwa - Max | 745W (Tc) |
Tanperati opere | -40°C ~ 175°C (TJ) |
Mounting Kalite | Chassis Mount |
Pake / Ka | Module |
Founisè Aparèy pake | SP1F |
Estati Stock: 12
Minimòm: 1
Kantite | Pri inite | Ext. Pri |
---|---|---|
Pri pa disponib, tanpri RFQ |
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.