NXP Semiconductors / PMWD26UN,518
Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la
PMWD26UN,518
| Nimewo Pati Manifakti: | PMWD26UN,518 |
| Manifakti: | NXP Semiconductors |
| Pati nan Deskripsyon: | MOSFET 2N-CH 20V 7.8A 8TSSOP |
| Fichye done yo: | PMWD26UN,518 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- NXP Semiconductors PMWD26UN,518 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | TrenchMOS™ |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Obsolete |
| FET Kalite | 2 N-Channel (Dual) |
| FET Karakteristik | Logic Level Gate |
| Drenaj Sous Voltage (Vdss) | 20V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 7.8A |
| Rds Sou (Max) @ Id, Vgs | 30mOhm @ 3.5A, 4.5V |
| Vgs (th) (Max) @ Id | 700mV @ 1mA |
| Gate Chaje (Qg) (Max) @ Vgs | 23.6nC @ 4.5V |
| Antre Kapasite (Ciss) (Max) @ Vds | 1366pF @ 16V |
| Pouvwa - Max | 3.1W |
| Tanperati opere | -55°C ~ 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Pake / Ka | 8-TSSOP (0.173", 4.40mm Width) |
| Founisè Aparèy pake | 8-TSSOP |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
 |
NXP Semiconductors |
 |
NXP Semiconductors |
 |
NXP Semiconductors |
 |
NXP Semiconductors |
 |
NXP Semiconductors |
 |
NXP Semiconductors |
Te ajoute nan kabwa!
Atik sa a te ajoute nan kabwa ou a.