TRS12N65FB,S1Q

Nimewo Pati Manifakti:	TRS12N65FB,S1Q
Manifakti:	Toshiba Electronic Devices and Storage Corporation
Pati nan Deskripsyon:	SIC SBD TO-247 V=650 IF=12A
Estati san plon / Estati RoHS:	San Plon / Konfòme RoHS
Kondisyon Stock:	Nan stok
Bato Soti nan:	Hong Kong
Fason chajman:	DHL/Fedex/TNT/UPS/EMS

REMAK: Toshiba Electronic Devices and Storage Corporation TRS12N65FB,S1Q disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.

Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.

package

Spesifikasyon

Kalite	Deskripsyon
Seri	-
Pakè	Tube
Pati Status	Active
Dyòd konte genyen	1 Pair Common Cathode
Kalite dyòd	Silicon Carbide Schottky
Voltage - DC ranvèse (Vr) (Max)	650 V
Kouran - Mwayèn rektifye (Io) (pou chak dyòd)	6A (DC)
Voltage - Forward (Vf) (Max) @ Si	1.6 V @ 6 A
Vitès	No Recovery Time > 500mA (Io)
Ranvèse Tan Rekiperasyon (TRR)	0 ns
Kouran - Ranvèse Leakage @ Vr	30 µA @ 650 V
Tanperati opere - Junction	175°C
Mounting Kalite	Through Hole
Pake / Ka	TO-247-3
Founisè Aparèy pake	TO-247

ACHTE OPSYON

Estati Stock: 236

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

Modèl popilè

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	TRS12N65FB,S1F(S Toshiba Electronic Devices and Storage Corporation
	TRS16N65FB,S1F(S Toshiba Electronic Devices and Storage Corporation

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