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Nimewo Pati Manifakti: | DD1000S33HE3BOSA1 |
Manifakti: | IR (Infineon Technologies) |
Pati nan Deskripsyon: | MODULE DIODE HVB130-3 |
Fichye done yo: | DD1000S33HE3BOSA1 Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | - |
Pakè | Tray |
Pati Status | Active |
Dyòd konte genyen | 2 Independent |
Kalite dyòd | Standard |
Voltage - DC ranvèse (Vr) (Max) | 3300 V |
Kouran - Mwayèn rektifye (Io) (pou chak dyòd) | 1000A (DC) |
Voltage - Forward (Vf) (Max) @ Si | 3.85 V @ 1000 A |
Vitès | Standard Recovery >500ns, > 200mA (Io) |
Ranvèse Tan Rekiperasyon (TRR) | - |
Kouran - Ranvèse Leakage @ Vr | 1000 A @ 1800 V |
Tanperati opere - Junction | -40°C ~ 150°C |
Mounting Kalite | Chassis Mount |
Pake / Ka | Module |
Founisè Aparèy pake | AG-IHVB130-3 |
Estati Stock: Anbake menm jou
Minimòm: 1
Kantite | Pri inite | Ext. Pri |
---|---|---|
Pri pa disponib, tanpri RFQ |
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.