Rochester Electronics / FFSH20120ADN-F155
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FFSH20120ADN-F155
| Nimewo Pati Manifakti: | FFSH20120ADN-F155 |
| Manifakti: | Rochester Electronics |
| Pati nan Deskripsyon: | RECTIFIER DIODE, SCHOTTKY, 1 PHA |
| Fichye done yo: | FFSH20120ADN-F155 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- Rochester Electronics FFSH20120ADN-F155 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | - |
| Pakè | Bulk |
| Pati Status | Active |
| Dyòd konte genyen | 1 Pair Common Cathode |
| Kalite dyòd | Silicon Carbide Schottky |
| Voltage - DC ranvèse (Vr) (Max) | 1.2 V |
| Kouran - Mwayèn rektifye (Io) (pou chak dyòd) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ Si | 1.75 V @ 10 A |
| Vitès | Fast Recovery =< 500ns, > 200mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | - |
| Kouran - Ranvèse Leakage @ Vr | 200 µA @ 1.2 V |
| Tanperati opere - Junction | -55°C ~ 175°C |
| Mounting Kalite | Through Hole |
| Pake / Ka | TO-247-3 |
| Founisè Aparèy pake | TO-247 |
Estati Stock: 5300
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
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