Vishay General Semiconductor – Diodes Division / 1N6484HE3/97
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1N6484HE3/97
| Nimewo Pati Manifakti: | 1N6484HE3/97 |
| Manifakti: | Vishay General Semiconductor – Diodes Division |
| Pati nan Deskripsyon: | DIODE GEN PURP 1KV 1A DO213AB |
| Fichye done yo: | 1N6484HE3/97 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- Vishay General Semiconductor – Diodes Division 1N6484HE3/97 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
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Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | SUPERECTIFIER® |
| Pakè | Tape & Reel (TR) |
| Pati Status | Active |
| Kalite dyòd | Standard |
| Voltage - DC ranvèse (Vr) (Max) | 1000 V |
| Kouran - Mwayèn rektifye (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ Si | 1.1 V @ 1 A |
| Vitès | Standard Recovery >500ns, > 200mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | - |
| Kouran - Ranvèse Leakage @ Vr | 10 µA @ 1000 V |
| Kapasite @ Vr, F | 8pF @ 4V, 1MHz |
| Mounting Kalite | Surface Mount |
| Pake / Ka | DO-213AB, MELF (Glass) |
| Founisè Aparèy pake | DO-213AB |
| Tanperati opere - Junction | -65°C ~ 175°C |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
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Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
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Vishay General Semiconductor – Diodes Division |
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Vishay General Semiconductor – Diodes Division |
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Roving Networks / Microchip Technology |
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Vishay General Semiconductor – Diodes Division |
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