SemiQ / GP3D010A120B
Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la
GP3D010A120B
| Nimewo Pati Manifakti: | GP3D010A120B |
| Manifakti: | SemiQ |
| Pati nan Deskripsyon: | SIC SCHOTTKY DIODE 1200V TO247-2 |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- SemiQ GP3D010A120B disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | Amp+™ |
| Pakè | Tube |
| Pati Status | Active |
| Kalite dyòd | Silicon Carbide Schottky |
| Voltage - DC ranvèse (Vr) (Max) | 1200 V |
| Kouran - Mwayèn rektifye (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ Si | 1.65 V @ 10 A |
| Vitès | No Recovery Time > 500mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | 0 ns |
| Kouran - Ranvèse Leakage @ Vr | 20 µA @ 1.2 kV |
| Kapasite @ Vr, F | 608pF @ 1V, 1MHz |
| Mounting Kalite | Through Hole |
| Pake / Ka | TO-247-2 |
| Founisè Aparèy pake | TO-247-2 |
| Tanperati opere - Junction | -55°C ~ 175°C |
Estati Stock: 1194
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
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