WeEn Semiconductors Co., Ltd / WNSC10650T6J
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WNSC10650T6J
| Nimewo Pati Manifakti: | WNSC10650T6J |
| Manifakti: | WeEn Semiconductors Co., Ltd |
| Pati nan Deskripsyon: | SILICON CARBIDE POWER DIODE |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- WeEn Semiconductors Co., Ltd WNSC10650T6J disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | - |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Active |
| Kalite dyòd | Silicon Carbide Schottky |
| Voltage - DC ranvèse (Vr) (Max) | 650 V |
| Kouran - Mwayèn rektifye (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ Si | 1.7 V @ 10 A |
| Vitès | No Recovery Time > 500mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | 0 ns |
| Kouran - Ranvèse Leakage @ Vr | 60 µA @ 650 V |
| Kapasite @ Vr, F | 328pF @ 1V, 1MHz |
| Mounting Kalite | Surface Mount |
| Pake / Ka | 4-VDFN Exposed Pad |
| Founisè Aparèy pake | 5-DFN (8x8) |
| Tanperati opere - Junction | 175°C (Max) |
Estati Stock: 3000
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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WeEn Semiconductors Co., Ltd |
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