TSC (Taiwan Semiconductor) / GPA806HC0G
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GPA806HC0G
| Nimewo Pati Manifakti: | GPA806HC0G |
| Manifakti: | TSC (Taiwan Semiconductor) |
| Pati nan Deskripsyon: | DIODE GEN PURP 800V 8A TO220AC |
| Fichye done yo: | GPA806HC0G Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- TSC (Taiwan Semiconductor) GPA806HC0G disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | Automotive, AEC-Q101 |
| Pakè | Tube |
| Pati Status | Active |
| Kalite dyòd | Standard |
| Voltage - DC ranvèse (Vr) (Max) | 800 V |
| Kouran - Mwayèn rektifye (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ Si | 1.1 V @ 8 A |
| Vitès | Standard Recovery >500ns, > 200mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | - |
| Kouran - Ranvèse Leakage @ Vr | 5 µA @ 800 V |
| Kapasite @ Vr, F | 50pF @ 4V, 1MHz |
| Mounting Kalite | Through Hole |
| Pake / Ka | TO-220-2 |
| Founisè Aparèy pake | TO-220AC |
| Tanperati opere - Junction | -55°C ~ 150°C |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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