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Nimewo Pati Manifakti: | FGB5N60UNDF |
Manifakti: | Rochester Electronics |
Pati nan Deskripsyon: | INSULATED GATE BIPOLAR TRANSISTO |
Fichye done yo: | FGB5N60UNDF Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | - |
Pakè | Bulk |
Pati Status | Active |
Kalite IGBT | NPT |
Voltage - Pèseptè emeteur Pèseptè (Max) | 600 V |
Kouran - Pèseptè (Ic) (Max) | 10 A |
Kouran - Pèseptè enpulsyonèl (Icm) | 15 A |
Vce (sou) (Max) @ Vge, Ic | 2.4V @ 15V, 5A |
Pouvwa - Max | 73.5 W |
Oblije chanje enèji | 80µJ (on), 70µJ (off) |
Kalite Antre | Standard |
Pòt Chaj | 12.1 nC |
Td (on / off) @ 25 ° C | 5.4ns/25.4ns |
Kondisyon tès la | 400V, 5A, 10Ohm, 15V |
Ranvèse Tan Rekiperasyon (TRR) | 35 ns |
Tanperati opere | -55°C ~ 150°C (TJ) |
Mounting Kalite | Surface Mount |
Pake / Ka | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Founisè Aparèy pake | TO-263AB (D²PAK) |