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Vishay / Siliconix / SI4712DY-T1-GE3

SI4712DY-T1-GE3

Nimewo Pati Manifakti: SI4712DY-T1-GE3
Manifakti: Vishay / Siliconix
Pati nan Deskripsyon: MOSFET N-CH 30V 14.6A 8SO
Fichye done yo: SI4712DY-T1-GE3 Fichye done yo
Estati san plon / Estati RoHS: San Plon / Konfòme RoHS
Kondisyon Stock: Nan stok
Bato Soti nan: Hong Kong
Fason chajman: DHL/Fedex/TNT/UPS/EMS
REMAK
Vishay / Siliconix SI4712DY-T1-GE3 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.

package

Spesifikasyon
Kalite Deskripsyon
SeriSkyFET®, TrenchFET®
PakèTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Pati StatusObsolete
FET KaliteN-Channel
TeknolojiMOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)30 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C14.6A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)4.5V, 10V
Rds Sou (Max) @ Id, Vgs13mOhm @ 15A, 10V
Vgs (th) (Max) @ Id2.5V @ 1mA
Gate Chaje (Qg) (Max) @ Vgs28 nC @ 10 V
Vgs (Max)±20V
Antre Kapasite (Ciss) (Max) @ Vds1084 pF @ 15 V
FET Karakteristik-
Pouvwa Dissipation (Max)2.5W (Ta), 5W (Tc)
Tanperati opere-55°C ~ 150°C (TJ)
Mounting KaliteSurface Mount
Founisè Aparèy pake8-SO
Pake / Ka8-SOIC (0.154", 3.90mm Width)
ACHTE OPSYON

Estati Stock: Anbake menm jou

Minimòm: 1

Kantite Pri inite Ext. Pri

Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

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