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Nimewo Pati Manifakti: | NXV55UNR |
Manifakti: | Nexperia |
Pati nan Deskripsyon: | NXV55UN/SOT23/TO-236AB |
Fichye done yo: | NXV55UNR Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | TrenchMOS™ |
Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
Pati Status | Active |
FET Kalite | N-Channel |
Teknoloji | MOSFET (Metal Oxide) |
Drenaj Sous Voltage (Vdss) | 30 V |
Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 1.9A (Ta) |
Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 1.5V, 4.5V |
Rds Sou (Max) @ Id, Vgs | 66mOhm @ 1.9A, 4.5V |
Vgs (th) (Max) @ Id | 900mV @ 250µA |
Gate Chaje (Qg) (Max) @ Vgs | 8.7 nC @ 4.5 V |
Vgs (Max) | ±8V |
Antre Kapasite (Ciss) (Max) @ Vds | 352 pF @ 15 V |
FET Karakteristik | - |
Pouvwa Dissipation (Max) | 340mW (Ta), 2.1W (Tc) |
Tanperati opere | -55°C ~ 150°C (TJ) |
Mounting Kalite | Surface Mount |
Founisè Aparèy pake | TO-236AB |
Pake / Ka | TO-236-3, SC-59, SOT-23-3 |