Vishay / Siliconix / SIDR610DP-T1-GE3
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SIDR610DP-T1-GE3
| Nimewo Pati Manifakti: | SIDR610DP-T1-GE3 |
| Manifakti: | Vishay / Siliconix |
| Pati nan Deskripsyon: | MOSFET N-CH 200V 8.9A/39.6A PPAK |
| Fichye done yo: | SIDR610DP-T1-GE3 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- Vishay / Siliconix SIDR610DP-T1-GE3 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | TrenchFET® |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Active |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 200 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 8.9A (Ta), 39.6A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 7.5V, 10V |
| Rds Sou (Max) @ Id, Vgs | 31.9mOhm @ 10A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Gate Chaje (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Vgs (Max) | ±20V |
| Antre Kapasite (Ciss) (Max) @ Vds | 1380 pF @ 100 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
| Tanperati opere | -55°C ~ 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Founisè Aparèy pake | PowerPAK® SO-8DC |
| Pake / Ka | PowerPAK® SO-8 |
Estati Stock: 1124
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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