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Nimewo Pati Manifakti: | GAN063-650WSAQ |
Manifakti: | Nexperia |
Pati nan Deskripsyon: | GANFET N-CH 650V 34.5A TO247-3 |
Fichye done yo: | GAN063-650WSAQ Fichye done yo |
Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
Kondisyon Stock: | Nan stok |
Bato Soti nan: | Hong Kong |
Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
Kalite | Deskripsyon |
---|---|
Seri | Automotive, AEC-Q101 |
Pakè | Tube |
Pati Status | Active |
FET Kalite | N-Channel |
Teknoloji | GaNFET (Cascode Gallium Nitride FET) |
Drenaj Sous Voltage (Vdss) | 650 V |
Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 34.5A (Ta) |
Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 10V |
Rds Sou (Max) @ Id, Vgs | 60mOhm @ 25A, 10V |
Vgs (th) (Max) @ Id | 4.5V @ 1mA |
Gate Chaje (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V |
Antre Kapasite (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
FET Karakteristik | - |
Pouvwa Dissipation (Max) | 143W (Ta) |
Tanperati opere | -55°C ~ 175°C (TJ) |
Mounting Kalite | Through Hole |
Founisè Aparèy pake | TO-247-3 |
Pake / Ka | TO-247-3 |