BSC883N03LSGATMA1

REMAK: Rochester Electronics BSC883N03LSGATMA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.

Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.

package

Spesifikasyon

Kalite	Deskripsyon
Seri	OptiMOS™
Pakè	Bulk
Pati Status	Active
FET Kalite	N-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	34 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	17A (Ta), 98A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	4.5V, 10V
Rds Sou (Max) @ Id, Vgs	3.8mOhm @ 30A, 10V
Vgs (th) (Max) @ Id	2.2V @ 250µA
Gate Chaje (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Antre Kapasite (Ciss) (Max) @ Vds	2.8 pF @ 15 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	2.5W (Ta), 57W (Tc)
Tanperati opere	-55°C ~ 150°C (TJ)
Mounting Kalite	Surface Mount
Founisè Aparèy pake	PG-TDSON-8-1
Pake / Ka	8-PowerTDFN

ACHTE OPSYON

Estati Stock: 9910

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

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