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| Nimewo Pati Manifakti: | STL4P2UH7 |
| Manifakti: | STMicroelectronics |
| Pati nan Deskripsyon: | MOSFET P-CH 20V 4A POWERFLAT |
| Fichye done yo: | STL4P2UH7 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |

| Kalite | Deskripsyon |
|---|---|
| Seri | DeepGATE™, STripFET™ VII |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Obsolete |
| FET Kalite | P-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 20 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 4A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 1.8V, 4.5V |
| Rds Sou (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 250µA |
| Gate Chaje (Qg) (Max) @ Vgs | 4.8 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Antre Kapasite (Ciss) (Max) @ Vds | 510 pF @ 10 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 2.4W (Tc) |
| Tanperati opere | 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Founisè Aparèy pake | PowerFlat™ (2x2) |
| Pake / Ka | 6-PowerWDFN |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
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US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.