SIHU4N80AE-GE3

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package

Spesifikasyon

Kalite	Deskripsyon
Seri	E
Pakè	Tube
Pati Status	Active
FET Kalite	N-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	800 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	4.3A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	10V
Rds Sou (Max) @ Id, Vgs	1.27Ohm @ 2A, 10V
Vgs (th) (Max) @ Id	4V @ 250µA
Gate Chaje (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V
Antre Kapasite (Ciss) (Max) @ Vds	622 pF @ 100 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	69W (Tc)
Tanperati opere	-55°C ~ 150°C (TJ)
Mounting Kalite	Through Hole
Founisè Aparèy pake	IPAK (TO-251)
Pake / Ka	TO-251-3 Long Leads, IPak, TO-251AB

ACHTE OPSYON

Estati Stock: 3000

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

Modèl popilè

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