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| Nimewo Pati Manifakti: | FQD2N80TM |
| Manifakti: | Sanyo Semiconductor/ON Semiconductor |
| Pati nan Deskripsyon: | MOSFET N-CH 800V 1.8A DPAK |
| Fichye done yo: | FQD2N80TM Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |

| Kalite | Deskripsyon |
|---|---|
| Seri | QFET® |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Active |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 800 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 1.8A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 10V |
| Rds Sou (Max) @ Id, Vgs | 6.3Ohm @ 900mA, 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Gate Chaje (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±30V |
| Antre Kapasite (Ciss) (Max) @ Vds | 550 pF @ 25 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Tanperati opere | -55°C ~ 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Founisè Aparèy pake | D-Pak |
| Pake / Ka | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
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US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.