IPI086N10N3GXKSA1

REMAK: IR (Infineon Technologies) IPI086N10N3GXKSA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.

Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.

package

Spesifikasyon

Kalite	Deskripsyon
Seri	OptiMOS™
Pakè	Tube
Pati Status	Active
FET Kalite	N-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	100 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	80A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	6V, 10V
Rds Sou (Max) @ Id, Vgs	8.6mOhm @ 73A, 10V
Vgs (th) (Max) @ Id	3.5V @ 75µA
Gate Chaje (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Antre Kapasite (Ciss) (Max) @ Vds	3980 pF @ 50 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	125W (Tc)
Tanperati opere	-55°C ~ 175°C (TJ)
Mounting Kalite	Through Hole
Founisè Aparèy pake	PG-TO262-3
Pake / Ka	TO-262-3 Long Leads, I²Pak, TO-262AA

ACHTE OPSYON

Estati Stock: 24

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

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