CSD23202W10T

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package

Spesifikasyon

Kalite	Deskripsyon
Seri	NexFET™
Pakè	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Pati Status	Active
FET Kalite	P-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	12 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	2.2A (Ta)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	1.5V, 4.5V
Rds Sou (Max) @ Id, Vgs	53mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id	900mV @ 250µA
Gate Chaje (Qg) (Max) @ Vgs	3.8 nC @ 4.5 V
Vgs (Max)	-6V
Antre Kapasite (Ciss) (Max) @ Vds	512 pF @ 6 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	1W (Ta)
Tanperati opere	-55°C ~ 150°C (TJ)
Mounting Kalite	Surface Mount
Founisè Aparèy pake	4-DSBGA (1x1)
Pake / Ka	4-UFBGA, DSBGA

ACHTE OPSYON

Estati Stock: 18785

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

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