NTZS3151PT1H

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package

Spesifikasyon

Kalite	Deskripsyon
Seri	-
Pakè	Bulk
Pati Status	Obsolete
FET Kalite	P-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	20 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	860mA (Ta)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	1.8V, 4.5V
Rds Sou (Max) @ Id, Vgs	150mOhm @ 950mA, 4.5V
Vgs (th) (Max) @ Id	1V @ 250µA
Gate Chaje (Qg) (Max) @ Vgs	5.6 nC @ 4.5 V
Vgs (Max)	±8V
Antre Kapasite (Ciss) (Max) @ Vds	458 pF @ 16 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	170mW (Ta)
Tanperati opere	-55°C ~ 150°C (TJ)
Mounting Kalite	Surface Mount
Founisè Aparèy pake	SOT-563-6
Pake / Ka	SOT-563, SOT-666

ACHTE OPSYON

Estati Stock: 160000

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

Modèl popilè

	NTZS3151PT1H Rochester Electronics
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