IPI110N20N3GAKSA1

REMAK: Rochester Electronics IPI110N20N3GAKSA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.

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package

Spesifikasyon

Kalite	Deskripsyon
Seri	OptiMOS™
Pakè	Bulk
Pati Status	Active
FET Kalite	N-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	200 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	88A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	10V
Rds Sou (Max) @ Id, Vgs	11mOhm @ 88A, 10V
Vgs (th) (Max) @ Id	4V @ 270µA
Gate Chaje (Qg) (Max) @ Vgs	87 nC @ 10 V
Vgs (Max)	±20V
Antre Kapasite (Ciss) (Max) @ Vds	7.1 pF @ 100 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	300W (Tc)
Tanperati opere	-55°C ~ 175°C (TJ)
Mounting Kalite	Through Hole
Founisè Aparèy pake	PG-TO262-3
Pake / Ka	TO-262-3 Long Leads, I²Pak, TO-262AA

ACHTE OPSYON

Estati Stock: 11795

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

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