Rectron USA / RM4N650LD
Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la
RM4N650LD
| Nimewo Pati Manifakti: | RM4N650LD |
| Manifakti: | Rectron USA |
| Pati nan Deskripsyon: | MOSFET N-CHANNEL 650V 4A TO252-2 |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- Rectron USA RM4N650LD disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | - |
| Pakè | Tape & Reel (TR) |
| Pati Status | Active |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 650 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 4A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 10V |
| Rds Sou (Max) @ Id, Vgs | 1.2Ohm @ 2.5A, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA |
| Gate Chaje (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±30V |
| Antre Kapasite (Ciss) (Max) @ Vds | 280 pF @ 50 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 46W (Tc) |
| Tanperati opere | -55°C ~ 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Founisè Aparèy pake | TO-252-2 |
| Pake / Ka | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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