BSZ097N04LSGATMA1

REMAK: IR (Infineon Technologies) BSZ097N04LSGATMA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.

Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.

package

Spesifikasyon

Kalite	Deskripsyon
Seri	OptiMOS™
Pakè	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Pati Status	Active
FET Kalite	N-Channel
Teknoloji	MOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)	40 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C	12A (Ta), 40A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)	4.5V, 10V
Rds Sou (Max) @ Id, Vgs	9.7mOhm @ 20A, 10V
Vgs (th) (Max) @ Id	2V @ 14µA
Gate Chaje (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Antre Kapasite (Ciss) (Max) @ Vds	1900 pF @ 20 V
FET Karakteristik	-
Pouvwa Dissipation (Max)	2.1W (Ta), 35W (Tc)
Tanperati opere	-55°C ~ 150°C (TJ)
Mounting Kalite	Surface Mount
Founisè Aparèy pake	PG-TSDSON-8
Pake / Ka	8-PowerTDFN

ACHTE OPSYON

Estati Stock: 28748

Minimòm: 1

Kantite	Pri inite	Ext. Pri
Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

Modèl popilè

	BSZ036NE2LSATMA1 IR (Infineon Technologies)
	BSZ0901NSATMA1 IR (Infineon Technologies)
	BSZ031NE2LS5ATMA1 IR (Infineon Technologies)
	BSZ0589NSATMA1 IR (Infineon Technologies)
	BSZ042N04NSG Rochester Electronics
	BSZ018NE2LSIATMA1 IR (Infineon Technologies)
	BSZ097N04LSGATMA1 IR (Infineon Technologies)
	BSZ0803LSATMA1 IR (Infineon Technologies)
	BSZ021N04LS6ATMA1 IR (Infineon Technologies)
	BSZ040N04LSGATMA1 IR (Infineon Technologies)

Atik sa a te ajoute nan kabwa ou a.