IR (Infineon Technologies) / IPD082N10N3GBTMA1
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IPD082N10N3GBTMA1
| Nimewo Pati Manifakti: | IPD082N10N3GBTMA1 |
| Manifakti: | IR (Infineon Technologies) |
| Pati nan Deskripsyon: | MOSFET N-CH 100V 80A TO252-3 |
| Fichye done yo: | IPD082N10N3GBTMA1 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- IR (Infineon Technologies) IPD082N10N3GBTMA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | OptiMOS™ |
| Pakè | Tape & Reel (TR) |
| Pati Status | Obsolete |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 100 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 80A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 6V, 10V |
| Rds Sou (Max) @ Id, Vgs | 8.2mOhm @ 73A, 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 75µA |
| Gate Chaje (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Antre Kapasite (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 125W (Tc) |
| Tanperati opere | -55°C ~ 175°C (TJ) |
| Mounting Kalite | Surface Mount |
| Founisè Aparèy pake | PG-TO252-3 |
| Pake / Ka | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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