IR (Infineon Technologies) / IRF6609
Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la
IRF6609
| Nimewo Pati Manifakti: | IRF6609 |
| Manifakti: | IR (Infineon Technologies) |
| Pati nan Deskripsyon: | MOSFET N-CH 20V 31A DIRECTFET |
| Fichye done yo: | IRF6609 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- IR (Infineon Technologies) IRF6609 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | HEXFET® |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Obsolete |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 20 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 31A (Ta), 150A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 4.5V, 10V |
| Rds Sou (Max) @ Id, Vgs | 2mOhm @ 31A, 10V |
| Vgs (th) (Max) @ Id | 2.45V @ 250µA |
| Gate Chaje (Qg) (Max) @ Vgs | 69 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Antre Kapasite (Ciss) (Max) @ Vds | 6290 pF @ 10 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 1.8W (Ta), 89W (Tc) |
| Tanperati opere | -40°C ~ 150°C (TJ) |
| Mounting Kalite | Surface Mount |
| Founisè Aparèy pake | DIRECTFET™ MT |
| Pake / Ka | DirectFET™ Isometric MT |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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