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IR (Infineon Technologies) / IPB042N10N3GE8187ATMA1

IPB042N10N3GE8187ATMA1

Nimewo Pati Manifakti: IPB042N10N3GE8187ATMA1
Manifakti: IR (Infineon Technologies)
Pati nan Deskripsyon: MOSFET N-CH 100V 100A D2PAK
Fichye done yo: IPB042N10N3GE8187ATMA1 Fichye done yo
Estati san plon / Estati RoHS: San Plon / Konfòme RoHS
Kondisyon Stock: Nan stok
Bato Soti nan: Hong Kong
Fason chajman: DHL/Fedex/TNT/UPS/EMS
REMAK
IR (Infineon Technologies) IPB042N10N3GE8187ATMA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.

package

Spesifikasyon
Kalite Deskripsyon
SeriOptiMOS™
PakèTape & Reel (TR)
Pati StatusActive
FET KaliteN-Channel
TeknolojiMOSFET (Metal Oxide)
Drenaj Sous Voltage (Vdss)100 V
Kouran - Drenaj kontinyèl (Id) @ 25 ° C100A (Tc)
Kondwi Voltage (Max Rds Sou, Min Rds Sou)6V, 10V
Rds Sou (Max) @ Id, Vgs4.2mOhm @ 50A, 10V
Vgs (th) (Max) @ Id3.5V @ 150µA
Gate Chaje (Qg) (Max) @ Vgs117 nC @ 10 V
Vgs (Max)±20V
Antre Kapasite (Ciss) (Max) @ Vds8410 pF @ 50 V
FET Karakteristik-
Pouvwa Dissipation (Max)214W (Tc)
Tanperati opere-55°C ~ 175°C (TJ)
Mounting KaliteSurface Mount
Founisè Aparèy pakeD²PAK (TO-263AB)
Pake / KaTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ACHTE OPSYON

Estati Stock: Anbake menm jou

Minimòm: 1

Kantite Pri inite Ext. Pri

Pri pa disponib, tanpri RFQ

Kalkil machandiz

US $ 40 pa FedEx.

Rive nan 3-5 jou

Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.

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