ROHM Semiconductor / R6030ENZ1C9
Imaj se pou referans, tanpri kontakte nou pou jwenn foto reyèl la
R6030ENZ1C9
| Nimewo Pati Manifakti: | R6030ENZ1C9 |
| Manifakti: | ROHM Semiconductor |
| Pati nan Deskripsyon: | MOSFET N-CH 600V 30A TO247 |
| Fichye done yo: | R6030ENZ1C9 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- ROHM Semiconductor R6030ENZ1C9 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | - |
| Pakè | Tube |
| Pati Status | Obsolete |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 600 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 30A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 10V |
| Rds Sou (Max) @ Id, Vgs | 130mOhm @ 14.5A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Gate Chaje (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Vgs (Max) | ±20V |
| Antre Kapasite (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 120W (Tc) |
| Tanperati opere | 150°C (TJ) |
| Mounting Kalite | Through Hole |
| Founisè Aparèy pake | TO-247 |
| Pake / Ka | TO-247-3 |
Estati Stock: 93
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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