IR (Infineon Technologies) / SPP20N65C3HKSA1
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SPP20N65C3HKSA1
| Nimewo Pati Manifakti: | SPP20N65C3HKSA1 |
| Manifakti: | IR (Infineon Technologies) |
| Pati nan Deskripsyon: | MOSFET N-CH 650V 20.7A TO220-3 |
| Fichye done yo: | SPP20N65C3HKSA1 Fichye done yo |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- IR (Infineon Technologies) SPP20N65C3HKSA1 disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | CoolMOS™ |
| Pakè | Tube |
| Pati Status | Obsolete |
| FET Kalite | N-Channel |
| Teknoloji | MOSFET (Metal Oxide) |
| Drenaj Sous Voltage (Vdss) | 650 V |
| Kouran - Drenaj kontinyèl (Id) @ 25 ° C | 20.7A (Tc) |
| Kondwi Voltage (Max Rds Sou, Min Rds Sou) | 10V |
| Rds Sou (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| Vgs (th) (Max) @ Id | 3.9V @ 1mA |
| Gate Chaje (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Vgs (Max) | ±20V |
| Antre Kapasite (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
| FET Karakteristik | - |
| Pouvwa Dissipation (Max) | 208W (Tc) |
| Tanperati opere | -55°C ~ 150°C (TJ) |
| Mounting Kalite | Through Hole |
| Founisè Aparèy pake | PG-TO220-3-1 |
| Pake / Ka | TO-220-3 |
Estati Stock: Anbake menm jou
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
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