ROHM Semiconductor / RB218NS200TL
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RB218NS200TL
| Nimewo Pati Manifakti: | RB218NS200TL |
| Manifakti: | ROHM Semiconductor |
| Pati nan Deskripsyon: | 200V, 20A SUPER LOW IR TYPE SCHO |
| Estati san plon / Estati RoHS: | San Plon / Konfòme RoHS |
| Kondisyon Stock: | Nan stok |
| Bato Soti nan: | Hong Kong |
| Fason chajman: | DHL/Fedex/TNT/UPS/EMS |
- REMAK
- ROHM Semiconductor RB218NS200TL disponib nan chipnets.com. Nou sèlman vann nouvo & orijinal pati epi nou ofri 1 ane garanti tan. Si ou ta renmen konnen plis sou pwodwi yo oswa aplike plis pi bon pri, tanpri kontakte nou klike sou Online Chat la oswa voye yon quote ba nou.
Tout Eelctronics Components yo pral anbalaj trè an sekirite pa ESD pwoteksyon antistatik.
Spesifikasyon
| Kalite | Deskripsyon |
|---|---|
| Seri | Automotive, AEC-Q101 |
| Pakè | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Pati Status | Active |
| Dyòd konte genyen | 1 Pair Common Cathode |
| Kalite dyòd | Schottky |
| Voltage - DC ranvèse (Vr) (Max) | 200 V |
| Kouran - Mwayèn rektifye (Io) (pou chak dyòd) | 20A |
| Voltage - Forward (Vf) (Max) @ Si | 880 mV @ 10 A |
| Vitès | Fast Recovery =< 500ns, > 200mA (Io) |
| Ranvèse Tan Rekiperasyon (TRR) | - |
| Kouran - Ranvèse Leakage @ Vr | 10 µA @ 200 V |
| Tanperati opere - Junction | 150°C (Max) |
| Mounting Kalite | Surface Mount |
| Pake / Ka | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Founisè Aparèy pake | LPTS |
Estati Stock: 980
Minimòm: 1
| Kantite | Pri inite | Ext. Pri |
|---|---|---|
Pri pa disponib, tanpri RFQ |
||
Kalkil machandiz
US $ 40 pa FedEx.
Rive nan 3-5 jou
Eksprime: (FEDEX, UPS, DHL, TNT) Livrezon gratis sou premye 0.5kg pou lòd plis pase 150 $, yo pral chaje twò gwo separeman.
Modèl popilè
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